050-7709 rev a 10-2013 product benefits ? higher reliability systems ? minimizes or eliminates snubber product features ? zero recovery time (t rr ) ? popular to-247 package ? low forward voltage ? low leakage current product applications ? anti-parallel diode -switchmode power supply -inverters ? power factor correction (pfc) APT30SCD65B 650v 30a maximum ratings t c = 25c unless otherwise speciied. zero recovery silicon carbide schottky diode symbol characteristic / test conditions ratings unit v r maximum d.c. reverse voltage 650 volts v rrm maximum peak repetitive reverse voltage v rwm maximum working peak reverse voltage i f maximum d.c. forward current t c = 25c 46 amps t c = 85c 30 i frm repetitive peak forward surge current (t c = 25c, t p = 10ms, half sine wave) 112 i fsm non-repetitive forward surge current (t c = 25c, t p = 10ms, half sine) 247 p tot power dissipation t c = 25c 156 w t c = 110c 50 t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for 10 seconds 300 symbol characteristic / test conditions min typ max unit v f forward voltage i f = 30a t j = 25c 1.5 1.8 volts i f = 30a, t j = 150c 1.9 i rm maximum reverse leakage current v r = 650v t j = 25c 30 600 a v r = 650v, t j = 150c 400 q c total capactive charge v r = 325v, i f = 30a, di/dt = -500a/s, t j = 25c 150 nc c t junction capacitance v r = 1v, t j = 25c, f = 1mhz 945 pf junction capacitance v r = 200v, t j = 25c, f = 1mhz 138 junction capacitance v r = 400v, t j = 25c, f = 1mhz 105 static electrical characteristics 1 - cathode 2 - anode back of case - cathode 1 2 http://www.microsemi.com t o -247 1 2 d 3 pak downloaded from: http:///
APT30SCD65B 050-7709 rev a 10-2013 thermal and mechanical characteristics microsemi reserves the right to change, without notice, the speciications and information contained herein. symbol characteristic / test conditions min typ max unit r jc junction-to-case thermal resistance 0.8 c/w w t package weight 0.22 oz 5.9 g torque maximum mounting torque 10 lbin 1.1 nm 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 -4 10 -3 10 -2 0.1 1 10 -5 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration z jc , thermal impedance (c/w) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : 0 10 20 30 40 50 60 0 1 2 3 4 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 v f , anode-to-cathode voltage (v) figure 2, forward current vs. forward voltage i f , forward current (a) case temperature (c) figure 3, maximum forward current vs. case temperature t j = -55 c t j = 25 c t j = 125 c t j = 150 c typical performance curves i f (peak) (a) 0.3 d = 0.9 0.7 single pulse 0.5 0.1 0.05 downloaded from: http:///
050-7709 rev a 9-2013 APT30SCD65B typical performance curves 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 case temperature (c) figure 4. maximum power dissipation vs. case temperature p total (w) 0 20 40 60 80 100 120 140 160 180 200 0 100 200 300 400 500 600 0 50 100 150 200 250 300 350 400 450 0 130 260 390 520 650 0 200 400 600 800 1000 1200 0 100 200 300 400 500 600 v r , reverse voltage (v) figure 6. reverse recovery charge vs. v r q rr , reverse recovery charge (nc) v r , reverse voltage (v) figure 5. reverse leakage currents vs. reverse voltage i r , reverse leakage current (a) v r , reverse voltage (v) figure 7. junction capacitance vs. reverse voltage c j , junction capacitance (pf) 25c 75c 125c 150c to-247 package outline 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max . 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 10.90 (.430) bsc 3.50 (.138) 3.81 (.150) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) cathode anode cathode 1.016(.040) dimensions in millimeters and (inches) downloaded from: http:///
APT30SCD65B 050-7709 rev a 9-2013 the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted , distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information co ntained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, tr ade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expre ssly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in wri ting signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or imp lied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsem i. it is the customers and users re - sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such informat ion is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/le gal/tnc.asp disclaimer: downloaded from: http:///
|
